Two-dimensional dopant characterization using SIMS, SCS and TSUPREM4

Quantitative two-dimensional (2D) dopant profiling for 0.25 micron CMOS technology was demonstrated using secondary ion mass-spectrometry (SIMS) and scanning capacitance spectroscopy (SCS). P-well and N-well dopant profiles measured by 2D SIMS are in agreement with TSUPREM4 (TS4) simulations. TS4 was pre-calibrated to the specific technology using 1D SIMS and electrical data. 2D SIMS, TS4 and SCS show agreement on the well boundary location. SCS is an advanced form of scanning capacitance microscopy (SCM) devised for pn-junction delineation. 2D SIMS dopant profiling with lateral resolution of 10 nm (limited by the lithography pixel size) and sensitivity of 1/spl times/10/sup 17/ cm/sup -3/ was realized on commercial equipment.