Integrated Tin Monoxide P-Channel Thin-Film Transistors for Digital Circuit Applications

High-performance integrated tin monoxide bottom-gate staggered p-channel thin-film transistors (TFTs) are realized and reported. The active layer has been formed by thermal vacuum evaporation and rapid thermal annealing under a continuous nitrogen flow, resulting in field-effect mobilities up to 1.6 cm
²
/(V · s) and contact resistances of around 148 Ω · cm. The integration of these TFTs in elementary building blocks for digital circuit applications such as inverters and ring-oscillators is demonstrated, resulting in stage delays down to 300 ns. Furthermore, a unipolar p-type-only 8-bit radio frequency identification code generator is realized, achieving 12.2 kb/s and comprising 294 tin monoxide TFTs.