Gate oxide integrity of thermal oxide grown on high temperature formed Si/sub 0.3/Ge/sub 0.7/

We have investigated the gate oxide integrity of thermal oxides direct grown on high temperature formed Si/sub 0.3/Ge/sub 0.7/. Good oxide integrity is evidenced by the low interface-trap density of 5.9/spl times/10/sup 10/ eV/sup -1/ cm/sup -2/, low oxide charge density of -5.6/spl times/10/sup 10/ cm/sup -2/, and the small stress-induced leakage current after -3.3 V stress for 10 000 s. The good gate oxide integrity is due to the high temperature formed and strain-relaxed Si/sub 0.3/Ge/sub 0.7/ that has a original smooth surface and stable after subsequent high temperature process.