Design and performance of asymmetric waveguide nitride laser diodes

We describe the design and performance characteristics of an asymmetric waveguide nitride laser diode structure, in which the p-cladding layer is placed immediately over the multiple-quantum-well (MQW) active region. Its close proximity to the active region enables it to serve not only as a cladding layer, but also as a potential barrier that confines injected electrons. This structure represents a departure from conventional nitride laser diode structures, where electron confinement is provided by a separate high-aluminum-content AlGaN tunnel barrier layer placed over the MQW active region. The optical confinement factor (/spl Gamma/) remains: comparable to that of the conventional structure, in spite of the QW's displacement from the center of the waveguide. Room-temperature CW operation was achieved with this structure.