An integrated microwave tunable dual-band Q-enhanced LC band-pass filter in 0.13μm SiGe BiCMOS

This paper presents a proof of concept X and Ku dual-band Q-enhanced LC band-pass filter (BPF) in 0.13 μm SiGe BiCMOS. The dual-band filtering response is achieved by subtracting two 2
^nd
-order BPF responses tuned at different bands to achieve higher out-of-bands attenuation. The center frequencies of the filter's two bands are tunable from 9.7 to 13.9 GHz. The Q of each bandpass filter can be tuned independently from 20 to 70. The filter achieves 165-154.5 dB·Hz of normalized dynamic range at the center frequencies of 9.7 and 13.9 GHz. The ultimate out-of-band attenuation on the lower side of the two passband responses is > 50 dB at 3 GHz and below. In between the two bands, the attenuation is 22 dB when the two passbands have 200 MHz bandwidth each. The filter achieves better out-of-band rejection with wider band channels at X and Ku bands compared to state of the art integrated filters. The filter consumes 115-130 mW of DC power dissipation. The core chip size is 0.53×0.7 mm
²
.