HEMT large-signal integral transform model including trapping and impact ionization

A new large-signal FET model is proposed which simultaneously covers trapping, impact ionization, breakdown and thermal effects in an effective analytical channel current formulation. Drain current and charge functions are described using an integral transform of conductances and capacitances. An InAlAs/InGaAs mHEMT extraction example demonstrates a good simultaneous prediction of DC, small-signal and large-signal performance of the device in spite of different low-frequency dispersion effects which may be related to trapping and impact ionization effects in the device.