Steep subthreshold swing analysis of dual metal drain dopingless double gate tunnel FETs based on ge-source with high-k for low power applications

In this paper, we investigated the performance of dual metal drain dopingless tunnel Field effect transistor (DMD-DLTFETs) based on ge-source with high dielectric material using charge plasma concept. There is no need of doping in the proposed device because the source and drain region are formed using charge plasma concept by choosing suitable work function for the source and drain metal electrodes. In the proposed device, we used Germanium in the source region to maximize the ON current and dual metal on drain electrode to creating a potential barrier to restricting the tunnelling of holes when the negative gate voltage applied. Therefore, the proposed device offers high I
ON
/I
off
ratio, smaller point subthreshold swing (55) and average SS etc. We have also done a comparative study of the proposed device with dual metal gate (DMG) double gate TFETs and conventional dopingless TFETs.