Improvement of Charge Injection Using Ferroelectric Si:HfO2 As Blocking Layer in MONOS Charge Trapping Memory

Metal/ferroelectric-Si:HfO
₂
/SiN/SiO
₂
/Si structure was fabricated to investigate the charge trapping properties. This device enhances the carrier injection into the nitride from the silicon due to the spontaneous polarization in SiO
₂
:HfO
₂
layer. Compared with conventional metal/SiO
₂
/SiN/SiO
₂
/Si devices, the proposed devices showed a larger memory window, faster program/erase speeds, and higher endurance with comparable retention properties.