Energetic electron/ion flow and microwave radiation during POS operation

Results of experimental investigations of high-energy election/ion beam generation and transportation in the region downstream of a submicrosecond plasma opening switch (I/sub pos//spl les/35 kA, /spl tau//sub 1/4//spl cong/300 ns) are presented. Experiments were carried out with different loads: short-circuit, high-impedance, and planar electron diode. It is shown that the electron/ion beam appearance in the region downstream of the POS load occurs almost simultaneously with the beginning of the inductive voltage, independently of the type of load. Generation of high-power microwave radiation (f/sub mw//spl les/10 GHz, P/sub mw//spl les/200 MW) was observed for all types of loads.