Low-temperature grown GaAs and Al/sub 0.3/Ga/sub 0.7/As MISFETs-characterization and model development

GaAs and Al/sub 0.3/Ga/sub 0.7/As, grown at 280/spl deg/C by molecular beam epitaxy (MBE) and in situ annealed at 600/spl deg/C for 10 minutes, have been employed as gate insulators in GaAs based field effect transistors and their properties analyzed. Low frequency noise studies on TLM structures of MISFETs were carried out to evaluate the performance of MISFETs. Insulator thickness dependency on the performance of MISFETs was observed. Noise performance was improved as the thickness of the insulator was reduced. Off-state breakdown characteristics of MISFET devices indicated a little change in the gate-drain breakdown characteristics of MISFETs. An analytical model has been developed to predict the DC and RF performance of the MISFET devices.