High-gain differential-output CMOS LNA for the 700 MHz LTE band

We present the design of a low-noise amplifier (LNA) with high-gain and differential output suitable for Long Term Evolution (LTE) receivers front-ends operating in 700 MHz band. The circuit, built in 130 nm CMOS technology, occupies an area of 453 × 259 μm
²
(without pads). The LNA is powered with 3.3 V and consumes a current of 6 mA (core). It reaches a power gain of 24.98 dB with a maximum noise figure of 1.5 dB.