Channel and gate engineered dielectric modulated asymmetric dual short gate TFET

In this paper, the performance of a novel n-type dielectric modulated gate engineered asymmetric dual short gate tunnel field effect transistor (ADSG-TFET) with pocket doping at the channel region is analyzed and presented. The effects of different high-k materials, silicon film thickness are investigated. The device characteristics are compared with conventional asymmetric structure with and without pocket doping. The proposed device architecture improves the bandband tunneling with superior drain current values. The simulation results shows an impressive subthreshold slope (SS), high Ion and high transconductance values. The simulations are done and results are compared among common TFET structures. The results of this simulations can give insights for implementation in future ULSI circuits.