An Ambipolar immune Si/GaAs hetero-junction doping-less TFET

In this paper, we propose a Si/GaAs based dopingless heterostructure TFET (DHTFET). Instead of using silicon-drain as in conventional dopingless TFET, GaAs is used to replace the drain region. Using charge plasma concept, source and drain regions are obtained on intrinsically doped Si/GaAs body. With the help of 2D simulation study, we report that the proposed Si/GaAs DHTFET exhibits full ambipolar current suppression by eight orders of magnitude up to the gate voltage range of V
GS
= −1.5V compared to the Si dopingless TFET (DLTFET). An OFF state current suppression of more than one order is achieved without affecting the ON state performance, therefore, enhancing the ION/IOFF ratio to more than 10
¹²
value.