Ultra thin-oxide damage from gate charging during PETEOS deposition processing

This paper presents a study of plasma-enhanced tetraethylorthosilicate oxide process (PETEOS) induced charging damage to thin gate oxide reliability of p-and n-MOS after gate poly processing. We explain the plasma induced gate oxide charging mechanism with the differences of ultra thin oxide (45 /spl Aring/) breakdown characteristics of p- and n-MOS capacitors.