Charge deposition modeling of thermal neutron products in fast submicron MOS devices

Ground-based thermal neutron reaction products (/spl alpha/, /sup 7/Li) appear to be an important terrestrial SEE concern for modern submicron technologies. We address some interesting spatial and temporal characteristics of neutron products. Accurate modeling of the temporal behavior of these products may be required for high-speed devices. In addition, we introduce a simulation methodology that determines device sensitivity to neutron reaction products as a function of neutron nuclear reaction location and the resulting ion track orientation.