AC measurements and dielectric properties of nitrogen-rich silicon nitride thin films

Nitrogen-rich silicon nitride thin films were produced using plasma-enhanced chemical vapor deposition. Material samples were tested immediately after the deposition process and annealed in argon ambient at 1073 K and 1373 K for 60 min in a resistance furnace. AC measurements of electrical properties were performed at frequency range from 50 Hz to 1 MHz in temperatures from 73 K to 375 K. Frequency and temperature dependences on capacity, conductivity, phase angle, permittivity and dielectric loss factor are presented. Based on those data charge transfer mechanism and dielectric properties were determined.