Thermophysical properties of pressureless sintered silicon nitride

This paper describes an analytical investigation of radio engineering characteristics of the silicon nitride ceramics. The temperature dependences of the dielectric permittivity and the dielectric loss tangent are determined in an explicit analytical form. It is shown that the obtained dependences adequately describe the experimental data. High-temperature dependences of the thermal conductivity and diffusion conductivity of the investigated material were also studied in the present work. In both cases, linear growth was observed with an increase in temperature.