The prediction for single event latchup sensitivity parameters of digital CMOS ICs based on its technological features

The paper presents the results of the analysis which was made in attempt to generalize the main single event latchup (SEL) sensitivity parameters such as saturation cross-section and the threshold LET for digital CMOS ICs. We analyzed SEL ion beam tests results for digital CMOS ICs of various functionality and obtained that for most ICs the SEL saturation cross-section may be determined in the relation to the area of IC's crystal.