Simulation and fabrication of AlGaAs/InGaAs/GaAs power PHEMT for MMIC applications at 35 GHz

In this paper, AlGaAs/InGaAs/GaAs power PHEMT was simulated by ATLAS, and fabricated with T-gate process. Measured performance of the PHEMT agreed well with that of simulation. S/sub 21/ of 3.6 dB was measured at 35 GHz with f/sub T/ over 45 GHz, and f/sub max/ over 100 GHz. The PHEMT was also analyzed at 35 GHz for the variations in MAG according to gate and drain biases, and also for the changes in MAG and the output power against the unit gate width and the number of gate fingers.