Growth and fabrication of In/sub x/Ga/sub 1-x/N/GaN multiple quantum well and blue light emitting diodes

Using photoluminescence (PL) and high resolution x-ray diffraction (HRXRD) measurements, we study the crystal growth parameters affecting the qualities of In/sub x/Ga/sub 1-x/N/GaN multiple quantum wells (MQW), such as GaN barrier thickness, number of wells, doping in GaN barriers, and so on. Additionally, we fabricated blue LEDs using optimized MQW conditions and characterized their properties.