Optically pumped continuous-wave operation of InAlGaAs/InAlAs/InP based 1.55 /spl mu/m vertical-cavity surface-emitting laser with SiO/sub 2//TiO/sub 2/ dielectric mirror

We have successfully demonstrated the CW operation of 1.55 /spl mu/m VCSEL consisting of a periodic gain structure of InAlGaAs/InGaAs quantum wells grown on the InAlGaAs/InAlAs/InP bottom mirror and SiO/sub 2//TiO/sub 2/ dielectric films as a top mirror. The entire structure was optically pumped using a YLF laser operating at 1.05 /spl mu/m. The light emission was obtained through the rear side of the wafer without antireflection coating. The CW lasing characteristics were explored at various temperatures.