SU-8 GPON Diplexer Based On H-Line Lithography by Direct Laser Writer

In this letter, the design, fabrication, and characterization of an SU-8 GPON diplexer based on directional couplers are presented. The polymeric devices on SiO
₂
/Si lower cladding substrate were directly written by introducing H-nu 470 photoinitiator, which provides substantial improvement in mechanical and thermal stability, reliability, and low loss, allowing flexible prototyping through H-line lithography at a 405-nm wavelength. Design of the filters and waveguide processing and fabrication are described, and the experimental results of the designed diplexer are shown.