Evaluation of 600 V direct-drive GaN HEMT and a comparison to GaN GIT

This paper presents an evaluation of a newly released power stage direct drive GaN HEMT. The double pulse test is performed and the dynamic performance is characterized. PCB layout optimization is also investigated for improved switching transients. It is shown that the direct drive system provides simplified circuit design, reduced number of external components, and small gate loop parasitics. Also, high reliability with optimized protection functions can be achieved. A comparison with a GaN gate injection transistor (GIT) is also presented. Both devices are rated at 600 V with similar current rating. Dynamic test results for both devices at 25°C and 125°C are presented.