Reverse bias lifetime analysis of 600V enhancement mode GaN devices

This work reports the reliability of Infineon's CoolGaN
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600V Enhancement mode GaN-on-Si transistors under high temperature reverse bias operation. Using the most conservative lifetime model; the extracted lifetime at use conditions of 480V, 125°C at 0.01% failure rate is greater than 70 years. The extracted activation energy (Ea) is 0.77eV with a single failure mode, Drain to Substrate. A common slope factor (β) of 7.4; suggests an excellent process control.