Analysis of Single-Event Effects in DDR3 and DDR3L SDRAMs Using Laser Testing and Monte-Carlo Simulations

This paper presents a comparative analysis of the single-event effect (SEE) sensitivity of Double Data Rate memories from different manufacturers. Two-photon laser testing is performed to extract technological information such as the memory array organization and an estimation of the cell size. SEE laser energy thresholds are compared as well as the impact of the applied power mode. Bitline upsets are experimentally observed and confirmed by an analysis based on Monte-Carlo simulations. Heavy-ion testing results, including various kinds of SEFIs, are presented and discussed.