Long-wavelength lasers prepared by semiconductor microfabrication

Fabrication technologies of semiconductor microstructures with the size from sub-/spl mu/m to tens nm range are very attractive for realization of novel structure photonic devices and their integrations in the field of optoelectronics. We have been investigating low-damage fabrication technologies suitable for advanced semiconductor lasers, for examples, 1.55 /spl mu/m wavelength GaInAsP-InP quantum-wire lasers and multiple-micro-cavity (MMC) lasers, by adopting an electron-beam (EB) direct writing followed by a wet chemical etching and an OMVPE embedding growth.