Diffusion and activation behaviors of boron by incorporated nitrogen ions in ammonia ambient

We investigated the diffusion and activation behaviors of BF/sub 2/ implanted (15 keV, 2/spl times/10/sup 15/ cm/sup -2/) samples annealed at 1000/spl deg/C for 10 sec in different ambients (N/sub 2//NH/sub 3/) with respect to the presence or absence of the surface oxide. In presence of surface oxide, the sample annealed in ammonia ambient gives a shallower junction depth than one annealed in nitrogen ambient. From results of XPS and SIMS measurement, we analyzed the mechanism of nitrogen incorporation in ammonia ambient through the possibility of microetching reactions that can be driven by the ammonia radicals and the surface oxide.