Computer simulation of decaborane implantation and rapid thermal annealing

Molecular dynamics (MD) and Metropolis Monte-Carlo (MMC) models of monomer B and decaborane implantation into Si and following rapid thermal annealing (RTA) processes have been developed. The implanted B dopant and Si-atomic diffusion coefficients were obtained for different substrate temperatures. The simulation of decaborane ion implantation has revealed the formation of an amorphized area in a subsurface region, much larger than that of a single B/sup +/ implantation, with the same energy per ion. The calculated B diffusion coefficient has values between 10/sup -12/-10/sup -10/ cm/sup 2/ s/sup -1/ which agrees well with experimental values obtained for an equilibrium B dopant in Si.