Surface swelling of MeV Si ion implanted silicon

Surface swelling of MeV Si ion implanted single crystal silicon was studied, with changing ion energies, sample temperature as well as dose. The effect of annealing was also examined. Swelling can be observed about 3/spl times/10/sup 13/ ions/cm/sup 2/ for 100 K implantation, and higher doses are required for higher temperature implantation, especially over 300 K. Saturation of swelling is also observed and the maximum value is almost proportional to the range of implanted ions. On the annealing, there is little effect up to 850 K, but the swelling except accumulation of implanted ions almost completely disappeared after successive 1000 K 30-min annealing. We can conclude that the measurement of swelling is an easy and non-destructive tool to investigate the behavior of damages or defects induced by ion implantation.