Defect formation in MeV ion implantation of boron and phosphorus

Few papers have been published about the unique materials aspects of damage accumulation during very high-energy (3 MeV boron and 5 MeV phosphorus) ion implantation. The damage created in the regions near the projected range and near surface regions will create a significant amount of defects. The creation of these defects are caused by two different mechanisms. The near surface defects are dominated by vacancies while the range projection defects are dominated by interstitials. Understanding the impact of these defects will require knowledge of the interactions with their annealing characteristics and size, density and complexing with impurities. Implantation was done into epitaxial grown layers on Czochralski substrates which were processed through subsequent annealing cycles which simulates a typical advanced CMOS process to understand the formation of the defects in the near surface and projected range. The material characterization was done by using TEM (plan view and cross section), selective silicon etching and other appropriate techniques for quantification of the damage.