Processing and characterization of a GaAs/Al/sub x/O/sub y/ quasi-three-dimensional photonic bandgap material

We report a relatively simple technique to realize a GaAs-based quasi-3D photonic bandgap (PBG) material with an index contrast of /spl sim/2, in which a single epitaxial growth and impurity-induced layer disordering and wet oxidation steps are used. We have made transmission measurement on the fabricated PBG material and observed a stop band, which is consistent with the theoretical results. We have also made direct measurement of the electro-optic coefficients in the PBG medium.