Quasi-phase-matched devices using sublattice-reversed semiconductor heterostructures

We propose a novel technique to realize quasi-phase-matched structures using compound semiconductors based on sublattice-reversal epitaxy, in which the sublattices of the zinc-blende structure are interchanged in the process of epitaxy. Sublattice-reversal epitaxy has been demonstrated in GaAs-Si-GaAs [100], GaP-Si-GaP [100], GaAs-Ge-GaAs [100] and GaAs-Ge-GaAs [111] systems.