Mismatch effects explained by the spectral model [MOS devices]

The currently available first order mismatch models cannot explain many of the observed effects. The physical modelling approach of the spectral model described in this paper gives a very precise description of actual mismatch behaviour in a closed form and leads to a deeper understanding. Together with small geometry considerations a very good prediction of mismatch effects for a wide range of layout structures can be obtained, which are verified by measurements.