Stressor efficacy and mobility enhancement in N-channel nanowire FETs

We present a TCAD process and analytical model based simulation analysis to investigate the effect of different stressors on nanowire FETs. We have utilized stress profiles extracted from TCAD process simulations and calculated mobility enhancement using the second-order piezoresistive model. Our analysis includes strained CESL and strained gate fill material for a gate-last process. Our process simulations show that a tensile CESL and a tensile gate metal fill have opposite impact on the channel stress. We further predict the optimum combination of the CESL and metal gate fill stressors for electron mobility enhancement.