Photocapacitive effect of ferroelectric hafnium-zirconate capacitor structure

In this work, we investigated the photocapacitive effect of the metal-ferroelectric-insulator-semiconductor capacitors under illumination. The photocapacitive effect is mainly caused by light photon excitation, contributed from the variation of depletion charge. We suggested that the ferroelectric domains are affected by defect dipole charges formed by the interface trapped charges to lead to the variation of depletion capacitance.