Gate-Controlled electron injection in tunneling contact IGZO TFTs

In this paper, the impact of gate voltage on the electron injection in a recently reported tunneling contact IGZO TFT has been studied. The dependence of the injection current on the temperature indicates thermionic emission dominates at small gate bias, while tunneling begins to contribute at large gate bias. The Schottky-barrier height at the metal/graphene/IGZO interface has been extracted, which is consistent with that obtained from previous photocurrent characterizations. The extracted barrier height implies the simplified contact physics and the applicability of the band alignment theory at the graphene inserted metal/IGZO interface.