Electronically tunable floating CMOS resistor independent of the MOS parameters and temperature

A novel, electronically tunable floating resistor, which can be realized by CMOS technology is presented in this work. The resistance value is independent of the MOS threshold voltage V/sub T/, the mobility /spl mu//sub 0/ and the parameter C/sub 0x/. The above characteristics allow the implementation of an accurate resistance value, independent of temperature. Yet, a theoretical analysis concerning second order effects is presented which leads to useful conclusions concerning circuit design and operation. The theoretical predictions are verified by PSPICE simulation results.