High energy, low dose ion implant monitoring using the OMS-3000

With the applications for high energy ion implant increasing in production, the need has arisen for a metrology technique that is capable of providing effective process control capability without the limitations of other methods. One technique, developed by Process Diagnostics Inc. (PDI), that has been shown to be capable of implant monitoring at moderate energies and doses up to about 3.0 E13 cm/sup -2/ with good dose and energy sensitivity, has been adapted for use in a higher energy regime. The technique involves optical densitometry using a dye impregnated copolymer film, whose optical density is sensitive to implanted dose and energy. Originally developed for use in low to moderate implant energies, the film was too thin to contain higher energy implants. This paper describes the initial testing and characterization of the technique using a thicker film.