MeV implanted boron and phosphorus photoresist penetration tests

With the introduction of new semiconductor technologies more processes are requiring the use of high energy (MeV) ion implantation. When fabricating semiconductor devices, it is important to understand the stopping power of the photoresist (PR) when used as a blocking mask for ion implantation. This study uses a 2/sup 3/ factorial experimental design varying energy and dose of both boron and phosphorus implants to define an MeV implant regime for the characterization of PR stopping power.