Novel species implantation using Applied Materials 9500/spl times/R/sup TM/ and /spl times/R LEAP/sup TM/ implanters

An increasing range of implanted species are being used to engineer carrier doping profiles. Applications include pre-amorphisation and layer mixing (group IV elements), shallow junctions and steep retrograde profiles (high mass group III and V elements), and control of dopant diffusion through co-implantation (transient enhanced diffusion, gate oxide penetration). We present data on the implantation of Si, Ge, In, Al, Sb and N in Applied Materials implanters, including beam currents, system operation and pre-cursor handling. The paper will also include process data derived from indium implants, using InCl/sub 3/, as a source feed. Single and multiply charged beams have been used and test wafers Implanted. Thermawave, sheet resistance and SIMS data (before and after RTA) will be presented and discussed.