Selective ion formation in a multi-cusp sputtering source

Mass selected ion production by chemical sputtering processes opens possibilities to synthesize films. In this work results of attempts for creating ions of C/sub 2/H/sub 2//sup -/, C/sub 2//sup -/, C/sub 2/H/sup -/, O/sup -/, O/sub 2//sup -/, Ti/sub 2//sup -/, and TiO/sub 3//sup -/, by alternately using C and Ti as the targets in a multi-cusp sputtering ion source are reported. The efficiencies of production for carbon negative ions from the carbon target in H/sub 2//Ar and H/sub 2//CH/sub 4/ discharges and titanium negative ions from the titanium target in O/sub 2//Ar and H/sub 2/O/Ar discharges showed the dependence on the history of the ion source operation. The formations of TiO/sub 2//sup -/ and TiO/sub 3//sup -/ were found affected by the relative amount of O/sub 2/ in the O/sub 2//Ar discharge.