NV-GSD-HC3 300 mm high current ion implantation system

The advanced high current ion implanter, the NV-GSD-HC3, has been developed to meet the requirements for 0.18 and 0.13 micron design rules of semiconductor manufacturing processes, especially for large size (300 mm, 200 mm) wafer processes and ultra-shallow junction processes. The following developments are incorporated in this system: an improved wafer handling system with very high throughput, high acceptance beam optics in the ultra low energy region by adopting the improved beam line from the NV-GSDIII system, charge neutralization system with plasma electron flood gun, improved long life ion source and advanced automatic control system.