Manufacturable planar bulk-InP avalanche photodiodes for 10 Gb/s applications

We have described a planar, bulk-ZnP APD fabricated using mature production processes which is simultaneously capable of 85 GHz gain-bandwidth products, peak bandwidths in excess of 10 GHz, and low-gain (M<3) turn-on of high bandwidth performance. This device exhibits dark currents on the order of 1 nA, capacitances of about 0.2 pF, and high reliability of better than 0.5 FIT. Finally, 10 Gb/s receiver modules incorporating these PSDs with GaAs HEMT-based TIAs have achieved back-to-back sensitivities of -26.5 dBm for a bit error rate of 10/sup -10/.