Multiscale-multiphysics modeling of nonpolar InGaN LEDs

In this work, we develop and employ a multiscale-multiphysics simulator (based on coupled VFF molecular mechanics, 10-band sp
³
s∗-spin tight-binding formalism, many-body full configuration interaction, and a TCAD transport module) to study and compare the performance of realistically-sized multiple-quantum-well wurtzite InGaN LEDs in polar (c-plane) and nonpolar (a-plane) crystallographic directions. The a-plane device exhibited smaller yet non-vanishing internal fields and higher optical transition rate as compared to the c-plane counterpart.