Assessment of Si/SiGe PMOS Schottky contacts through atomistic tight binding simulations: Can we achieve the 10−9 Ω·cm? target?

With continuous shrinking of devices in accordance with Moore's law, metal-semiconductor resistivity starts playing an important role for device performance. To meet ITRS target of 10
^-9
Ω·cm
²
by 2023, it is important to evaluate the effect of different device parameters such as doping concentration, Schottky barrier height, strain and SiGe mole fraction on contact resistivity. In this work, such a resistivity study has been done on Si/SiGe PMOS contacts through 10-band atomistic tight binding quantum transport simulations. Optimum target values for barrier height as a function of doping concentration are obtained.