An $E$ -Band Analog Predistorter and Power Amplifier MMIC Chipset

An analog predistorter and power amplifier (PA) MMIC chipset has been designed to improve the overall linearity for applications in wireless communication at the E-band. The circuits have been implemented in a commercial 0.1 μm InGaAs pHEMT process. The PA delivers an output referred 1-dB gain compression (OP
_{1 dB}
) of 24 dBm, saturated output power of 27 dBm, and OIP3 of 32 dBm between 71 and 76 GHz. In combination with the analog predistortion circuit, the combined chipset improves carrier to third-order intermodulation ratio by 20 dB at an average output power of 21 dBm and at the same time increasing the OP
_{1 dB}
by 2 dB to 26 dBm.