Photolithographic and plasma etching technique for organic field effect transistor fabrication

Photolithographic and plasma etching techniques were used to fabricate top gate-bottom contacts Organic Field Effect Transistors. The steps of the technology are shown, for transistors with Poly 3-hexylthiophene as organic semiconductor and cross linked Poly Vinyl Alcohol as gate insulator. Devices with low operational voltage, high mobility and high I
_ON
=I
_OFF
ratios with very good reproducibility were fabricated. Also, environmental stability was achieved, preventing transistor degradation from O
₂
and humidity.