240 GHz RF-MEMS switch in a 0.13 μm SiGe BiCMOS Technology

This paper presents an RF-MEMS switch fabricated in a 0.13 μm SiGe BiCMOS process technology for 240 GHz applications. The fabricated RF-MEMS switch provides a high capacitance C
_on
/C
_off
ratio of 8.78 and beyond state of the art RF performances, 0.44 dB of insertion loss and 24.6 dB of isolation at 240 GHz. The return loss is better than 9.6 dB over the J-band (220-325 GHz). To the best of the authors' knowledge, the results achieved in this study are the lowest insertion loss and the highest isolation of a Single-Pole Single-Throw (SPST) switch reported at 240 GHz.