CMOS beyond Si: Nanometer-Scale III-V MOSFETs

CMOS electronics constitutes the backbone of our information society. The extraordinary success of CMOS is based on the unique scaling properties of the Si MOSFET. Over the last decade, increasing concerns have been expressed about the ability of the Si MOSFET to continue its historical scaling path. This threatens the future of Moore's Law and its trifecta of benefits: cost, power and performance. For about a decade now, III-V compound semiconductors have been under intensive research in an effort to push Moore's Law beyond the point that Si can reach. How far have we come in this quest? This paper summarizes the state of the art of III-V compound semiconductor MOSFETs for future CMOS.