Investigation on oxygen implanted silicon by optical spectroscopy and RBS

This study is devoted both to the theory and experimental approach on optical reflectance spectra for the characterisation of oxygen implanted sample. The calculation of light reflected intensity from the silicon surface impurified by O+ ionic implantation has been carried out. The theoretical spectra were fitted to the experimental data in the frame of a parameter extraction procedure. The temperature activated redistribution and the formation of the buried oxide layer has been analysed in the frame of this approach. The depth and the width of the SiO/sub 2/ buried layer obtained has been compared with RBS data. A good agreement between two methods was obtained.